1 standard ics high voltage, high current darlington transistor array ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b the ba12001b, ba12002, BA12003B, BA12003Bf, and ba12004b are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of darlington transistors. because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using induc- tive loads such as relay coils, attachments can be kept to a minimum. with an output withstanding voltage as high as 60v (ba12001b, BA12003B, BA12003Bf, and ba12004b) and an output current (sink current) of 500ma, this product is ideal for use with various drivers and as an interface with other elements. applications drivers for leds, lamps, relays and solenoids interface with other elements features 1) high output current. (i out = 500ma max.) 2) high output voltage withstand resistance. (v out = 50v max.) 3) seven darlington transistors built in. 4) equipped with output surge-absorbing clamp diode. (note: refer to the "reference items when using in application.") in1 in2 in3 in4 in5 in6 in7 gnd out1 out2 out3 out4 out5 out6 out7 com 8 16 15 14 13 12 11 10 1 2 3 4 5 6 7 9 block diagram
2 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b internal circuit configuration absolute maximum ratings (ta = 25?) parameter symbol limits unit v ce 60 v input voltage input current v in ? 0.5 ~ + 30 v ba12002 other than ba12002 other than ba12001b ba12001b dip package sop package 50 i in 25 output current i out 500 ground pin current i gnd 2.3 * 1 a power dissipation pd 1250 * 2 625 * 3 mw diode reverse voltage v r 60 v diode forward current i f 500 ma operating temperature topr ? 25 ~ + 75 c storage temperature tstg ? 55 ~ + 150 c ma / driver ma / driver power supply voltage * 1 pulse width % 20ms, duty cycle % 10%, same current for all 7 circuits * 2 reduced by 10mw for each increase in ta of 1 c over 25 c . * 3 reduced by 50mw for each increase in ta of 1 c over 25 c . in com out gnd 3k w 7.2k w in com out gnd 3k w 7.2k w 10.5k w in com out gnd 3k w 7.2k w 2.7k w in com out gnd 3k w 7.2k w 10.5k w fig.1 ba12001b fig.2 ba12002 fig.3 BA12003B / bf fig.4 ba12004b
3 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b electrical characteristics (unless otherwise noted, ta=25?) parameter symbol min. typ. max. unit conditions output leakage current i l ?10 m a v ce = 60v (only ba12002: v ce = 50v) dc current transfer ratio h fe 1000 2400 v output saturation voltage v ce(sat) 0.94 1.1 v 1.14 1.3 1.46 1.6 input voltage v in 10.2 11 v 1.75 2 2.53 5 v in 10.4 12 v 1.91 2.4 2.75 6 v in 10.7 13.5 v 2.17 3.4 3.27 8 input current i in 0.88 1.3 ma v in = 17v v in = 3.85v 0.90 1.35 ba12002 BA12003B / bf ba12004b ba12002 BA12003B / bf ba12004b ba12002 BA12003B / bf ba12004b ba12002 BA12003B / bf ba12004b 0.39 0.5 diode reverse current i r ?50 m a v r = 60v (only ba12002: v r = 50v) diode forward voltage v f 1.73 2 v i f = 350ma input capacitance c in ?0 pf v ce = 2v, i out = 350ma i out = 100ma, i in = 250 m a i out = 200ma, i in = 350 m a i out = 350ma, i in = 500 m a v ce = 2v, i out = 100ma v ce = 2v, i out = 200ma v ce = 2v, i out = 350ma v in = 5v v in = 0v, f = 1mhz note: input voltage and input current for ba12001 vary based on external resistor. recommended operating conditions (ta = 25?) parameter symbol min. typ. max. unit conditions output current i out 350 ma fig.9, 10 power supply voltage v ce 55 v 50 input voltage (excluding ba12001b) v in 30 v input current (ba12001b only) i in 25 ma / driver ba12002 other than ba12002
reference items when using in application the ba12001b is a transistor array which can be di- rectly coupled to a general logic circuit such as pmos, cmos, or ttl. because the base current is limited to 25ma, a current limiting resistor needs to be connected in series with the input. the ba12002 is designed for direct coupling with a 14 to 25v system pmos. in order to limit the input current, a level shift diode (7v) and resistor are connected in series to each of the inputs. the BA12003B / bf can be coupled directly to ttl or cmos output (when operating at 5v). in order to limit the input current to a stable value, resistors are con- nected in series to each of the inputs. the ba12004b is designed for direct coupling to cmos or pmos output using a 6 to 15v power supply voltage. in order to limit the input current to a stable value, resistors are connected in series to each of the inputs. the load for each of these products should be connect- ed between the driver output and the power supply. to protect the ic from excessive swing voltage, the com pin (pin 9) should be connected to the power supply. 4 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b application example ry (1) relay driver led (2) led driver fig.6 open open i l v ce (1) output leakage current i l measurement circuits open i i i o v ce (sat) (2) dc current transfer ratio output saturation voltage i i i o v ce ( sat) h fe = open i o v ce v i (3) input voltage v in open open v i (4) input current i in open i r v r open (5) diode reverse current i r open open i f v f (6) diode forward voltage i f open open v i l o h i capacitance bridge f test signal level 20mvrms (7) input capacitance c in fig.5
5 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b fig. 7 shows the configuration of the on-chip diode for surge absorption. in the construction of the surge-absorbing diode, there is an n-p junction between the n-layer (n-well + bl) and the substrate (p-sub) so that when the diode is on, current flows from the output pin to the substrate. in terms of the vertical construction, this diode is config- ured similar to a pnp transistor. when using the surge- absorbing diode, take appropriate measures regarding the thermal characteristics of the design considering the current that will be handled. also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge- absorbing diode can be foreseen, we strongly recom- mend connecting a schottky barrier diode (or other type of diode with a low foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current. iso p iso p b / l idi isub n + p + in-flow current to the surge-absorbing diode n + n + out com p-sub fig. 7 vertical construction of the surge-absorbing diode n-well
6 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b electrical characteristic curves power dissipation: pd (mw) ambient temperature: ta ( c) 1200 1250 1400 1000 800 600 625 400 200 0 25 50 75 100 125 150 fig. 8 power dissipation vs. ambient temperature other than BA12003Bf BA12003Bf output current: i o (ma) duty cycle: (%) 500 400 300 200 100 0 10 20 30 40 50 60 70 80 90 100 all series 2ch 4ch 5ch 7ch 6ch 3ch fig. 9 output conditions ( 1 ) output current: i out (ma) duty cycle (%) 500 400 350 300 200 100 020406080100 10% 20% ta = 75 c ta = 25 c 110ma 64ma fig. 10 output conditions ( 2 ) when all circuits are on all series output current: i out (ma) supply voltage: v cc (v) 500 400 350 300 200 100 0 10 20 30 40 50 max. usage conditions usage conditions range fig. 11 usage conditions range per circuit the shaded range should never be exceeded under any circumstances dc current transfer ratio: h fe output curret: i out (ma) 5000 2000 1000 100 200 500 ta = 25 c v ce = 2.0v 10 20 50 100 200 500 1000 fig. 12 dc current transfer ratio vs. output current output current: i out (ma) collector to emitter voltage: v ce (v) 500 400 300 0 100 200 0 0.5 1.0 1.5 2.0 2.5 ta = 25 c ta = 80 c ta = ?30 c i in = 250 m a fig. 13 output current vs. voltage between collector and emitter output current: i out (ma) collector to emitter voltage: v ce (v) 500 400 300 0 100 200 10 0.5 1.0 1.5 2.0 2.5 ta = 25 c ta = 80 c ta = ?30 c i in = 350 m a fig. 14 output current vs. voltage between collector and emitter output current: i out (ma) collector to emitter voltage: v ce (v) 500 400 300 0 100 200 0 0.5 1.0 1.5 2.0 2.5 ta = 25 c ta = 80 c ta = ?30 c i in = 500 m a fig. 15 output current vs. voltage between collector and emitter input current: i in (ma) input voltage: v in (v) 4 3 2 1 010203040 ta = ?25 c ta = 25 c ta = 75 c fig. 16 input current vs. input voltage (ba12002)
7 standard ics ba12001b / ba12002 / BA12003B / BA12003Bf / ba12004b input current: i in (ma) input voltage: v in (v) 20 15 10 0 5 10 20 30 40 ta = ?25 c ta = 25 c ta = 75 c fig. 17 input current vs. input voltage (BA12003B / bf) input voltage: v in (v) input current: i in (ma) 4 3 2 1 0 10 20 30 40 ta = 25 c ta = 75 c ta = ?25 c fig. 18 input current vs. input voltage (ba12004b) output voltage: v ce out (v) input voltage: v in (v) 25 20 15 10 5 0 4 6 8 10 14 12 v out = 20v r l = 68 w fig.19 output voltage vs. input voltage (ba12002) ta = 75 c ta = ?25 c ta = 25 c output voltage: v ce out (v) input voltage: v in (v) 0.5 1 1.5 2.5 2 25 20 15 10 5 0 ta = 75 c ta = 25 c ta = ?25 c v out = 20v r l = 68 w fig. 20 output voltage vs. input voltage (BA12003B / bf) output voltage: v out (v), v ce (v) 25 20 5 15 10 0 12345 ta = 75 c ta = 25 c ta = ?25 c v out = 20v r l = 68 w input voltage: v in (v), v i (v) fig. 21 output voltage vs. input voltage (ba12004b) dip16 sop16 ba12001b / ba12002 / BA12003B / ba12004b BA12003Bf 0.4 0.1 1.27 0.15 0.15 0.1 0.3min. 4.4 0.2 6.2 0.3 0.11 1.5 0.1 1 16 10.0 0.2 8 9 0.51min. 0.3 0.1 9 16 8 1 6.5 0.3 3.2 0.2 4.25 0.3 0.5 0.1 19.4 0.3 2.54 0 ~ 15 7.62 external dimensions (units: mm)
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